N-Channel: SMSLS423-01 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET same as Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 TO78 Linear Integrated Systems LS423 manufactured by Semiconix Semiconductor - Gold chip technology for known good N-Channel die, N-Channel flip chip, N-Channel die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor N-Channel: SMSLS423-01 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET same as Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 TO78 Linear Integrated Systems LS423 manufactured by Semiconix Semiconductor - Gold chip technology for known good N-Channel die, N-Channel flip chip, N-Channel die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. TO78 Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 Linear Integrated Systems LS423,SMSLS423-01,Dual,,N-Channel, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire N-Channel: SMSLS423-01 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET same as Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 TO78 Linear Integrated Systems LS423 manufactured by Semiconix Semiconductor - Gold chip technology for known good N-Channel die, N-Channel flip chip, N-Channel die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components from Semiconix Semiconductor N-Channel: SMSLS423-01 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET same as Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 TO78 Linear Integrated Systems LS423 manufactured by Semiconix Semiconductor - Gold chip technology for known good N-Channel die, N-Channel flip chip, N-Channel die, wafer foundry for discrete semiconductors, integrated circuits and integrated passive components manufactured by Semiconix Semiconductor. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. TO78 Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 Linear Integrated Systems LS423,SMSLS423-01,Dual,,N-Channel, gold,chip,goldchip,gold chip technology, known good die, flip chip, bare die, wafer foundry, discrete semiconductors, integrated circuits, integrated passive components,gold metallization, aluminum, copper, system in package, SIP, silicon printed circuit board, silicon PCB, ceramic substrates, chip on board, flip chip, chip and gold wire REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP semiconix semiconductor - where the future is today - gold chip technology SMSLS423-01 - FLIP CHIP GOLD CHIP TECHNOLOGY™ LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES APPLICATIONS N-Channel JFET Transistor - FLIP CHIP High input impedance High Gain High transconductance Low noise Low value of gate to drain capacitance High reliability Unique new design in 0402 style case Gold metallization RoHS compliant, Lead Free Compatible with both chip and wire, flip chip and surface mount assembly. High Input Impedance Amplifier Low-Noise Amplifier Differential Amplifier Constant Current Source Analog Switch or Gate Voltage Controlled Resistor Instrumentation, medical and sensor applications Chip on Board System in package SIP Hybrid Circuits SMSLS423-01 LS423 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET SMSLS423-01 Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 Linear Integrated Systems LS423 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET - PRODUCT DESCRIPTION The junction field effect transistor in its simplest form is essentially a voltage controlled resistor. The resistive element is usually a bar of silicon. For an N-channel JFET this bar is an N-type material sandwiched between two layers of P-type material. The two layers of P-type material are electrically connected together and are called the gate. One end of the N-type bar is called the source and the other is called the drain. Current is injected into the channel from the source terminal, and collected at the drain terminal. The interface region of the P- and the N-type materials forms a P-N junction. Since the Gate junction is reverse biased and because there is no minority carrier contribution to the flow through the device, the input impedance is extremely high. The control element for the JFET comes from depletion of charge carriers from the n-channel. When the Gate is made more negative, it depletes the majority carriers from a larger depletion zone around the gate. This reduces the current flow for a given value of Source-to-Drain voltage. Modulating the Gate voltage modulates the current flow through the device. Flip Chip N-Channel JFET Transistors series are available in die form in four different pad compositions: -FC, -GB, -GT and -AN. These products are ideal for high reliability hybrid circuits, multi chip module applications and surface mount applications. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001 DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions. ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Parameter Symbol Value Unit Storage Temperature TSTG -65 to +150 °C Operating Junction Temperature TJ -55 to +150 °C Power Dissipation PD 400 mW Gate Forward Current -Igf 10 mA Gate to Drain or Source Voltage -VGSS 40 V Drain to Source Voltage -VDSO 40 V Electrical Characteristics* TC = 25°C unless otherwise noted Name Symbol Test Conditions Value Unit Min. Typ. Max Drift vs. Temperature |ΔVGS1-2/ΔT|max. VDG=10V, ID=30mA,TA=-55°C to +125°C 40 mV/°C Offset Voltage |VGS1-2|max. VDG=10V, ID=30mA 25 mV Breakdown Voltage BVGSS VDS=0 ID=1nA 40 60 V Gate-to-Gate Breakdown BVGGO IG=1mA ID=0 IS=0 40 V Drain Current Full Conduction IΔSS VDS=10V,VGS=0 60 1000 mA Gate Voltage,Pinchoff VGS(off)orVP VDS=10V ID=1nA 2 V Gate Voltage,Operating Range VGS VDS=10V ID=30mA 1.8 V Gate Current Operating -IG VDG=10V ID=30mA 0.25 pA Gate Current Operating -IG VDG=10V ID=30mA TA=+125°C 250 pA Gate Current,At Full Conduction -IGSS VGS=20V VDS=0 1 pA Gate Current,High Temperature -IGSS VGS=20V VDS=0,TA=+125°C 1 nA Transconductance Full Conduction Yfss VDG=10V VGS=0 f=1kHz 300 1500 mmho Transconductance Typical Operation Yfs VDG=10V ID=30mA,f=1KHz 120 200 150 mmho Output Conductance,Full Operation YOSS VDG=10V,VGS=0 10 mmho Output Conductance, Operating YOS VDG=10V,ID=30mA 0.1 3 mmho Common Mode Rejection,-20 log |DVGS1-2/DVDS| CMR DVDS=10to 20V, ID=30mA 90 dB Common Mode Rejection,-20 log |DVGS1-2/DVDS| CMR DVDS=5 to 10V, ID=30mA 90 dB Common Source Input Capacitance Ciss VDS=10V,VGS=0,f=1MHz 3 pF Reverse Transfer capacitance Crss VDG=10V,ID=0,f=1MHz 1.5 pF Noise Figure NF VDG=10V,ID=30mA,f=10Hz,RG=10MW 1 dB Equivalent Input Noise Voltage en VDG=10V,ID=30mA,f=10Hz 20 70 nV/√Hz Equivalent Input Noise Voltage en VDG=10V,ID=30mA,f=1kHz 10 nV/√Hz 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. SPICE MODEL Spice model pending. CROSS REFERENCE PARTS: Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 GENERAL DIE INFORMATION Substrate Thickness [mils] Size LxW[mils] Bonding pads dimensions per drawing Backside Silicon 10±2 20x40±2 Type Pad metal Thickness Assembly -FC TiW/Au 4µm±1 Wire bonding or Silver epoxy -GB TiW/Au 25µm±2.5 Thermosonic -GT Ti/Pt/AuSn 5µm±1 Reflow -AN Ni/Au 5µm±1 Solder reflow Optional backside coating and/or marking. LAYOUT / DIMENSIONS / PAD LOCATIONS Click to select process: -FC -GB -GT -AN SMSLS423-01 Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 Linear Integrated Systems LS423 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET SMSLS423-01 Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 Linear Integrated Systems LS423 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Pinout: 1 - G1,2 - D1,3 - S1,4 - G2,5 - D2,6 - S2, wire bonding SMSLS423-01 Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 Linear Integrated Systems LS423 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET thermosonic SMSLS423-01 Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 Linear Integrated Systems LS423 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET thermal SMSLS423-01 Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 Linear Integrated Systems LS423 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET solder reflow SMSLS423-01 Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 Linear Integrated Systems LS423 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Semiconix flip chip components are designed for dry assembly processes as well as for processes that use adhesives, fluxes etc. Dry assembly process is an assembly process that does not use additional solders, fluxes or adhesives. Thermosonic wire bonding is a dry assembly process. Semiconix Flip Chip -FC series can be also used for thermosonic wire bonding. Semiconix Gold Bump -GB series are flip chips that are thermosonically attached to a circuit. Semiconix Gold Tin -GT series are flip chips with Au/Sn, 80/20 metallized pads. GT series can be attached to circuits by bringing the die in contact with a substrate which temperature is more than 280°C. Upon cooling bellow 280C, the die is firmly welded to the substrate. Flux less dry assembly is most reliable but is also most expensive because of thick gold bumps or expensive Au/Sn process. Semiconix -FC series is designed to be used for flip chip assembly with conductive silver epoxy. It is a simple and inexpensive process consisting of 3 steps: - transfer a thin conductive epoxy layer onto the bonding pads; -align to substrate and attach; -cure silver epoxy and inspect. Same procedure may be used also with -GB series in certain applications. Semiconix Gold/Nickel -AN series is the most efficient wafer level chip size package W-CSP designed for mixed surface mount and flip chip applications. The assembly process is same as for packaged surface mount components. The process consist of at least 3 steps; -screen print solder paste on the printed circuit board; -flip chip, align and attach to the tacky solder paste; -dry paste, reflow at T>220°C, clean, etc. Semiconix Flip Chip -AN series are available in many sizes with landing pads compatible with the industry standard CSP as well as surface mount packages. STANDARD PRODUCTS ORDERING INFORMATION VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($) Flip chip SMSLS423-01-FC -WP 10000 -FF 19000 Flip chip SMSLS423-01-FC -WP 50000 -FF 95000 Gold Bump SMSLS423-01-GB -WP 10000 -FF 19000 Gold Bump SMSLS423-01-GB -WP 50000 -FF 95000 Gold-Tin SMSLS423-01-GT -WP 10000 -FF 19000 Gold-Tin SMSLS423-01-GT -WP 50000 -FF 95000 Gold/Nickel SMSLS423-01-AN -WP 10000 -FF 19000 Gold/Nickel SMSLS423-01-AN -WP 50000 -FF 95000 PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice. LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times. CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met. CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. INSTANT QUOTE Semiconix P/N Quantity E-mail DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent. HOME PRODUCT TREE PACKAGES PDF VERSION SEARCH SEMICONIX SEMICONDUCTOR www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 SEMICONIX SEMICONDUCTOR Last updated:January 01, 1970 Display settings for best viewing: Current display settings: Page hits: 17 Screen resolution: 1124x864 Screen resolution: Total site visits: 315244 Color quality: 16 bit Color quality: bit 1990-2009 SEMICONIX SEMICONDUCTOR All rights reserved. No material from this site may be used or reproduced without permission.

REGISTER-LOGIN PRODUCTS CROSS REFERENCE INVENTORY REQUEST QUOTE ORDER ONLINE SITE MAP

   
semiconix semiconductor - where the future is today - gold chip technology SMSLS423-01 - FLIP CHIP
GOLD CHIP TECHNOLOGY™ LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

FEATURES APPLICATIONS N-Channel JFET Transistor - FLIP CHIP
High input impedance
High Gain
High transconductance
Low noise
Low value of gate to drain capacitance
High reliability
Unique new design in 0402 style case
Gold metallization
RoHS compliant, Lead Free
Compatible with both chip and wire, flip chip and surface mount assembly.
High Input Impedance Amplifier
Low-Noise Amplifier
Differential Amplifier
Constant Current Source
Analog Switch or Gate
Voltage Controlled Resistor
Instrumentation, medical and sensor applications
Chip on Board
System in package SIP
Hybrid Circuits
SMSLS423-01 LS423 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
SMSLS423-01 Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 Linear Integrated Systems LS423 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET - PRODUCT DESCRIPTION
The junction field effect transistor in its simplest form is essentially a voltage controlled resistor. The resistive element is usually a bar of silicon. For an N-channel JFET this bar is an N-type material sandwiched between two layers of P-type material. The two layers of P-type material are electrically connected together and are called the gate. One end of the N-type bar is called the source and the other is called the drain. Current is injected into the channel from the source terminal, and collected at the drain terminal. The interface region of the P- and the N-type materials forms a P-N junction. Since the Gate junction is reverse biased and because there is no minority carrier contribution to the flow through the device, the input impedance is extremely high. The control element for the JFET comes from depletion of charge carriers from the n-channel. When the Gate is made more negative, it depletes the majority carriers from a larger depletion zone around the gate. This reduces the current flow for a given value of Source-to-Drain voltage. Modulating the Gate voltage modulates the current flow through the device.
Flip Chip N-Channel JFET Transistors series are available in die form in four different pad compositions: -FC, -GB, -GT and -AN. These products are ideal for high reliability hybrid circuits, multi chip module applications and surface mount applications.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. Semiconix has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. Semiconix also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. See AN-SMX-001

DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS
Discrete semiconductors are manufactured using Semiconix in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.

ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)
Parameter Symbol Value Unit
Storage Temperature TSTG -65 to +150 °C
Operating Junction Temperature TJ -55 to +150 °C
Power Dissipation PD 400 mW
Gate Forward Current -Igf 10 mA
Gate to Drain or Source Voltage -VGSS 40 V
Drain to Source Voltage -VDSO 40 V

Electrical Characteristics* TC = 25°C unless otherwise noted
Name Symbol Test Conditions Value Unit
Min. Typ. Max
Drift vs. Temperature |ΔVGS1-2/ΔT|max. VDG=10V, ID=30mA,TA=-55°C to +125°C 40 mV/°C
Offset Voltage |VGS1-2|max. VDG=10V, ID=30mA 25 mV
Breakdown Voltage BVGSS VDS=0 ID=1nA 40 60 V
Gate-to-Gate Breakdown BVGGO IG=1mA ID=0 IS=0 40 V
Drain Current Full Conduction IΔSS VDS=10V,VGS=0 60 1000 mA
Gate Voltage,Pinchoff VGS(off)orVP VDS=10V ID=1nA 2 V
Gate Voltage,Operating Range VGS VDS=10V ID=30mA 1.8 V
Gate Current Operating -IG VDG=10V ID=30mA 0.25 pA
Gate Current Operating -IG VDG=10V ID=30mA TA=+125°C 250 pA
Gate Current,At Full Conduction -IGSS VGS=20V VDS=0 1 pA
Gate Current,High Temperature -IGSS VGS=20V VDS=0,TA=+125°C 1 nA
Transconductance Full Conduction Yfss VDG=10V VGS=0 f=1kHz 300 1500 mmho
Transconductance Typical Operation Yfs VDG=10V ID=30mA,f=1KHz 120 200 150 mmho
Output Conductance,Full Operation YOSS VDG=10V,VGS=0 10 mmho
Output Conductance, Operating YOS VDG=10V,ID=30mA 0.1 3 mmho
Common Mode Rejection,-20 log |DVGS1-2/DVDS| CMR DVDS=10to 20V, ID=30mA 90 dB
Common Mode Rejection,-20 log |DVGS1-2/DVDS| CMR DVDS=5 to 10V, ID=30mA 90 dB
Common Source Input Capacitance Ciss VDS=10V,VGS=0,f=1MHz 3 pF
Reverse Transfer capacitance Crss VDG=10V,ID=0,f=1MHz 1.5 pF
Noise Figure NF VDG=10V,ID=30mA,f=10Hz,RG=10MW 1 dB
Equivalent Input Noise Voltage en VDG=10V,ID=30mA,f=10Hz 20 70 nV/√Hz
Equivalent Input Noise Voltage en VDG=10V,ID=30mA,f=1kHz 10 nV/√Hz
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
SPICE MODEL
Spice model pending.
CROSS REFERENCE PARTS: Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423

GENERAL DIE INFORMATION
Substrate Thickness
[mils]
Size
LxW[mils]
Bonding pads dimensions per drawing Backside
Silicon 10±2 20x40±2
TypePad metalThicknessAssembly
-FCTiW/Au4µm±1Wire bonding or Silver epoxy
-GBTiW/Au25µm±2.5Thermosonic
-GTTi/Pt/AuSn5µm±1Reflow
-ANNi/Au5µm±1Solder reflow
Optional backside coating and/or marking.

LAYOUT / DIMENSIONS / PAD LOCATIONS
Click to select process: -FC -GB -GT -AN
SMSLS423-01 Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 Linear Integrated Systems LS423 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET SMSLS423-01 Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 Linear Integrated Systems LS423 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Pinout: 1 - G1,2 - D1,3 - S1,4 - G2,5 - D2,6 - S2,
wire bonding SMSLS423-01 Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423, Linear Integrated Systems LS423 Linear Integrated Systems LS423 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Semiconix flip chip components are designed for dry assembly processes as well as for processes that use adhesives, fluxes etc. Dry assembly process is an assembly process that does not use additional solders, fluxes or adhesives. Thermosonic wire bonding is a dry assembly process. Semiconix Flip Chip -FC series can be also used for thermosonic wire bonding. Semiconix Gold Bump -GB series are flip chips that are thermosonically attached to a circuit. Semiconix Gold Tin -GT series are flip chips with Au/Sn, 80/20 metallized pads. GT series can be attached to circuits by bringing the die in contact with a substrate which temperature is more than 280°C. Upon cooling bellow 280C, the die is firmly welded to the substrate. Flux less dry assembly is most reliable but is also most expensive because of thick gold bumps or expensive Au/Sn process.
Semiconix -FC series is designed to be used for flip chip assembly with conductive silver epoxy. It is a simple and inexpensive process consisting of 3 steps: - transfer a thin conductive epoxy layer onto the bonding pads; -align to substrate and attach; -cure silver epoxy and inspect. Same procedure may be used also with -GB series in certain applications.
Semiconix Gold/Nickel -AN series is the most efficient wafer level chip size package W-CSP designed for mixed surface mount and flip chip applications. The assembly process is same as for packaged surface mount components. The process consist of at least 3 steps; -screen print solder paste on the printed circuit board; -flip chip, align and attach to the tacky solder paste; -dry paste, reflow at T>220°C, clean, etc.
Semiconix Flip Chip -AN series are available in many sizes with landing pads compatible with the industry standard CSP as well as surface mount packages.

STANDARD PRODUCTS ORDERING INFORMATION

VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($)
Flip chip SMSLS423-01-FC -WP 10000 -FF 19000
Flip chip SMSLS423-01-FC -WP 50000 -FF 95000
Gold Bump SMSLS423-01-GB -WP 10000 -FF 19000
Gold Bump SMSLS423-01-GB -WP 50000 -FF 95000
Gold-Tin SMSLS423-01-GT -WP 10000 -FF 19000
Gold-Tin SMSLS423-01-GT -WP 50000 -FF 95000
Gold/Nickel SMSLS423-01-AN -WP 10000 -FF 19000
Gold/Nickel SMSLS423-01-AN -WP 50000 -FF 95000

PRICES - Listed prices are only for standard products, available from stock. Inventory is periodically updated. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order of $550.00. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by SEMICONIX SEMICONDUCTOR at any time and without notice.
LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times.
CONTINOUS SUPPLY - Semiconix guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met.
CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page.
SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.
ORDERING - Semiconix accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by Semiconix sales department in writing. Accepted orders are non cancelable binding contracts.
SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF.

INSTANT QUOTE
Semiconix P/N Quantity E-mail    

DISCLAIMER - SEMICONIX has made every effort to have this information as accurate as possible. However, no responsibility is assumed by SEMICONIX for its use, nor for any infringements of rights of third parties, which may result from its use. SEMICONIX reserves the right to revise the content or modify its product line without prior notice. SEMICONIX products are not authorized for and should not be used within support systems, which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent.

HOME PRODUCT TREE PACKAGES PDF VERSION SEARCH

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